April 2006
Rev 15
1/14
14
STB80NF10
STP80NF10
N-channel 100V - 0.012
- 80A - TO-220 / D
2
PAK
Low gate charge STripFETTM II Power MOSFET
General features
Exceptional dv/dt capability
100% Avalanche tested
Application oriented characterization
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
Switching application
Internal schematic diagram
Type
V
DSS
R
DS(on)
I
D
(1)
STP80NF10
100V
<0.015
80A
STB80NF10
100V
<0.015
80A
1
2
3
1
3
TO-220
DPAK
www.st.com
Order codes
Part number
Marking
Package
Packaging
STP80NF10
P80NF10@
TO-220
Tube
STB80NF10
B80NF10@
DPAK
Tape & reel
Contents
STP80NF10 - STB80NF10
2/14
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STP80NF10 - STB80NF10
Electrical ratings
3/14
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage (V
GS
= 0)
100
V
V
GS
Gate- source voltage
20
V
I
D
(1)
1.
Limited by Package
Drain current (continuous) at T
C
= 25C
80
A
I
D
(1)
Drain current (continuous) at T
C
= 100C
80
A
I
DM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
P
TOT
Total dissipation at T
C
= 25C
300
W
Derating factor
2
W/C
dv/dt
(3)
3.
I
SD
<80A, di/dt < 300A/s, V
DD
=80% V
(BR)DSS
Peak diode recovery voltage slope
7
V/ns
E
AS
(4)
4.
Starting Tj = 25C, I
D
= 80A, V
DD
= 50V
Single pulse avalanche energy
350
mJ
T
stg
T
j
Storage temperature
Operating junction temperature
-55 to 175
C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
0.5
C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
C/W
T
l
Maximum lead temperature for soldering purpose
300
C
Electrical characteristics
STP80NF10 - STB80NF10
4/14
2 Electrical
characteristics
(T
CASE
=25C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250A, V
GS
= 0
100
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating @125C
1
10
A
A
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 40A
0.012
0.015
Table 4.
Dynamic
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration = 300 s, duty cycle 1.5 %
Forward transconductance
V
DS
=25V
,
I
D
=40 A
50
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
5500
700
175
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 50V, I
D
= 80A,
V
GS
= 10V
135
23
51.3
182
nC
nC
nC
STP80NF10 - STB80NF10
Electrical characteristics
5/14
Table 5.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 50V, I
D
= 40A,
R
G
= 4.7
,
V
GS
=10V
(see Figure 14)
26
80
116
60
ns
ns
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
I
SD
Source-drain current
80
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
320
A
V
SD
(2)
2.
Pulsed:pulse duration=300s, duty cycle 1.5%
Forward on voltage
I
SD
= 80A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=80A, V
DD
= 50V
di/dt = 100A/s,T
j
=150C
106
450
8.5
ns
nC
A
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